View FDS6986AS_364731.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

FDS6986AS
March 2005
FDS6986AS
General Description
Dual Notebook Power Supply N-Channel PowerTrench(R) SyncFETTM
Features
* Q2: Optimized to minimize conduction losses Includes SyncFET Schottky body diode RDS(on) = 20 m @ VGS = 10V RDS(on) = 28 m @ VGS = 4.5V * Q1: Optimized for low switching losses Low gate charge (10 nC typical) RDS(on) = 29 m @ VGS = 10V RDS(on) = 38 m @ VGS = 4.5V The FDS6986AS is designed to replace two single SO8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6986AS contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology.
7.9A, 30V
6.5A, 30V
1 /S D2 1 /S D2
D
D
D
5 6 7
Q2
4 3
D1
D
D1
Q1
2 1
SO-8
G
Pin 1 SO-8
S
S
S
G S2 12 /D S1
G
8
2
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage
TA = 25C unless otherwise noted
Parameter
Q2
30
(Note 1a)
Q1
30 16 6.5 20 2 1.6 1 0.9 -55 to +150
Units
V V A W
- Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation
Drain Current
20 7.9 30
(Note 1a) (Note 1b) (Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
C
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Device FDS6986AS FDS6986AS_NL (Note 4)
(Note 1a) (Note 1)
78 40 Tape width 12mm 12mm
C/W C/W Quantity 2500 units 2500 units
FDS6986AS Rev A(X)
Package Marking and Ordering Information
Device Marking FDS6986AS FDS6986AS Reel Size 13" 13"
(c)2005 Fairchild Semiconductor Corporation
FDS6986AS
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSS
TA = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage
Test Conditions
VGS = 0 V, ID = 1 mA VGS = 0 V, ID = 250 uA ID = 1 mA, Referenced to 25C ID = 250 A, Referenced to 25C VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = 16 V, VDS = 0 V VDS = VGS, ID = 1 mA VDS = VGS, ID = 250 A ID = 1 mA, Referenced to 25C ID = 250 uA, Referenced to 25C VGS = 10 V, ID = 7.9 A VGS = 10 V, ID = 7.9 A, TJ = 125C VGS = 4.5 V, ID = 7 A VGS = 10 V, ID = 6.5 A VGS = 10 V, ID = 6.5 A, TJ = 125C VGS = 4.5 V, ID = 5.6 A VGS = 10 V, VDS = 5 V VDS = 5 V, ID = 7.9 A VDS = 5 V, ID = 6.5 A
Type Min Typ Max Units
Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 30 30 31 23 500 1 100 V mV/C A nA
Off Characteristics
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
(Note 2)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance
Q2 Q1 Q2 Q1 Q2
1 1
Q1
1.7 1.9 -3.2 -4.0 17 25 22 21 32 32
3 3
V mV/C
20 32 28 29 49 38
m
ID(on) gFS
On-State Drain Current Forward Transconductance
Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1
30 20 25 15 550 720 180 120 70 60 3.2 1.2
A S
Dynamic Characteristics
Ciss Coss Crss RG Input Capacitance VDS = 10 V, VGS = 0 V, Output Capacitance f = 1.0 MHz Reverse Transfer Capacitance Gate Resistance VGS = 15mV, f = 1.0 MHz pF pF pF
Switching Characteristics
td(on) tr td(off) tf td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
(Note 2)
VDD = 15 V, ID = 1 A, VGS = 10V, RGEN = 6
VDD = 15 V, ID = 1 A, VGS = 4.5V, RGEN = 6
Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1
9 10 6 4 25 24 4 3 11 10 15 9 15 13 6 3
18 19 12 8 40 39 8 6 20 20 26 18 26 23 12 6
ns ns ns ns ns ns ns ns
FDS6986AS Rev A (X)
Electrical Characteristics
Symbol Parameter
(continued)
TA = 25C unless otherwise noted
Test Conditions
(Note 2)
Type Min Typ Max Units
Switching Characteristics
Qg(TOT) Qg Qgs Qgd
Total Gate Charge, Vgs = 10V Total Gate Charge, Vgs = 5V Gate-Source Charge Gate-Drain Charge Q2: VDS = 15 V, ID = 7.9 A Q1: VDS = 15 V, ID = 6.5 A
Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1
(Note 3) (Note 2) (Note 2)
10 12 5.6 6.5 2.0 2.3 1.5 2.1
14 17 8 9
nC nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Trr Qrr Trr Qrr VSD Maximum Continuous Drain-Source Diode Forward Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge Drain-Source Diode Forward Voltage IF = 10 A, diF/dt = 300 A/s IF = 6.5 A, diF/dt = 100 A/s VGS = 0 V, IS = 2.3 A VGS = 0 V, IS = 1.3 A 3.0 1.3 15 6 20 12 0.6 0.8 0.7 1.2 A ns nC ns nC V
(Note 3)
Q2 Q1
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a)
78C/W when mounted on a 0.5in2 pad of 2 oz copper
b)
125C/W when mounted on a 0.02 in2 pad of 2 oz copper
c)
135C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. See "SyncFET Schottky body diode characteristics" below. 4. FDS6986AS_NL is a lead free product. FDS6986AS_NL marking will appear on the reel label.
FDS6986AS Rev A (X)
FDS6986AS
Typical Characteristics: Q2
30
VGS = 10V 3.5V
2
VGS = 3.0V
25 ID, DRAIN CURRENT (A)
6.0V 4.5V 3.0V
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
1.75
20
1.5
3.5V 4.0V
15
1.25
4.5V
10
2.5V
5.0V 6.0V 10V
5
1
0 0 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V) 2.5 3
0.75 0 5 10 15 20 ID, DRAIN CURRENT (A) 25 30
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.065 RDS(ON), ON-RESISTANCE (OHM)
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
ID = 7.9A VGS = 10V
ID = 3.95A 0.055
1.4
1.2
0.045
1
0.035
TA = 125 C
o
0.8
0.025 TA = 25oC 0.015
0.6 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150
2
4 6 8 VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 3. On-Resistance Variation with Temperature.
30 IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100
VGS = 0V
25 ID, DRAIN CURRENT (A) 20 15
TA = 125oC
10
1
TA = 125oC
0.1
25oC
10
-55oC
0.01
-55 C
o
5
25 C
o
0.001
0 1.5 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) 2 3.5
0.0001 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS6986AS Rev A (X)
FDS6986AS
Typical Characteristics: Q2
10 VGS, GATE-SOURCE VOLTAGE (V)
ID = 7.9A VDS = 10V 20V
800 f = 1MHz VGS = 0 V 600 Ciss 400 Coss 200
8
15V
6
4
2
Crss
CAPACITANCE (pF)
0 0 3 6 Qg, GATE CHARGE (nC) 9 12
0 0 4 8 12 16 VDS, DRAIN TO SOURCE VOLTAGE (V) 20
Figure 7. Gate Charge Characteristics.
100
100s 50
Figure 8. Capacitance Characteristics.
P(pk), PEAK TRANSIENT POWER (W)
ID, DRAIN CURRENT (A)
10
RDS(ON) LIMIT 100ms
1ms 10ms 1s 10s DC
40
SINGLE PULSE RJA = 135C/W TA = 25C
30
1
20
0.1
VGS = 10V SINGLE PULSE RJA = 135oC/W TA = 25 C
o
10
0.01 0.01
0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V)
100
0 0.001
0.01
0.1 1 t1, TIME (sec)
10
100
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
FDS6986AS Rev A (X)
FDS6986AS
Typical Characteristics Q1
20
VGS = 10V 6.0V 4.5V 5.0V 4.0V
3.4 VGS = 3.0V
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
3 2.6 2.2 1.8 1.4 1 0.6 3.5V 4.0V 4.5V 5.0V 6.0V 10V
ID, DRAIN CURRENT (A)
15
3.5V
10
3.0V
5
2.5V
0 0 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V) 2.5 3
0
5
10 ID, DRAIN CURRENT (A)
15
20
Figure 11. On-Region Characteristics.
Figure 12. On-Resistance Variation with Drain Current and Gate Voltage.
0.135
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
RDS(ON), ON-RESISTANCE (OHM)
ID = 6.5A VGS = 10V
ID = 3.3 A 0.115 0.095
1.4
1.2
0.075 TA = 125oC 0.055 TA = 25oC 0.035
1
0.8
0.6 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150
0.015 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10
Figure 13. On-Resistance Variation with Temperature.
20 IS, REVERSE DRAIN CURRENT (A)
VDS = 5V TA = -55oC 125 C
o
Figure 14. On-Resistance Variation with Gate-to-Source Voltage.
100
VGS = 0V
10
ID, DRAIN CURRENT (A)
16
25 C
o
1
TA = 125 C
o
12
0.1
25 C
o
8
0.01
-55oC
4
0.001
0 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4 4.5
0.0001 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2
Figure 15. Transfer Characteristics.
Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS6986AS Rev A (X)
FDS6986AS
Typical Characteristics Q1
10
1000
ID = 6.5A f = 1MHz VGS = 0 V
VGS, GATE-SOURCE VOLTAGE (V)
8
800 CAPACITANCE (pF)
VDS = 10V 20V Ciss
6 15V 4
600
400
Coss
2
200
Crss
0 0 3 6 9 Qg, GATE CHARGE (nC) 12 15
0 0 4 8 12 16 VDS, DRAIN TO SOURCE VOLTAGE (V) 20
Figure 17. Gate Charge Characteristics.
100
100s
Figure 18. Capacitance Characteristics.
50 P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE RJA = 135C/W TA = 25C
ID, DRAIN CURRENT (A)
10
RDS(ON) LIMIT 100ms
1ms 10ms 1s 10s DC
40
30
1
20
0.1
VGS = 10V SINGLE PULSE o RJA = 135 C/W TA = 25oC
10
0.01 0.01
0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V)
100
0 0.001
0.01
0.1 1 t1, TIME (sec)
10
100
Figure 19. Maximum Safe Operating Area.
Figure 20. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
0.1
0.1 0.05 0.02 0.01
RJA(t) = r(t) * RJA RJA = 135 C/W P(pk) t1 t2
SINGLE PULSE
0.01
TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
0.001 0.0001
0.001
0.01
0.1 t1, TIME (sec)
1
10
100
1000
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.
FDS6986AS Rev A (X)
FDS6986AS
Typical Characteristics (continued)
SyncFET Schottky Body Diode Characteristics
Fairchild's SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 22 shows the reverse recovery characteristic of the FDS6986AS. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device.
IDSS, REVERSE LEAKAGE CURRENT (A) 0.1
0.01
125oC
0.001
100oC
0.0001
0.8A/DIV
0.00001
25oC
0.000001 0 5 10 15 20 VDS, REVERSE VOLTAGE (V) 25 30
Figure 24. SyncFET body diode reverse leakage versus drain-source voltage and temperature.
12.5nS/DIV
Figure 22. FDS6986AS SyncFET body diode reverse recovery characteristic.
For comparison purposes, Figure 23 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS6690A).
0.8A/DIV
12.5nS/DIV
Figure 23. Non-SyncFET (FDS6690A) body diode reverse recovery characteristic.
FDS6986AS Rev A (X)
FDS6986AS
Typical Characteristics
VDS VGS RGE VGS
0V tp
L tP DUT IAS 0.01 + VDD IAS
BVDSS VDS VDD
vary tP to obtain required peak IAS
tAV Figure 25. Unclamped Inductive Load Test Circuit
Drain Current Same type as
Figure 26. Unclamped Inductive Waveforms
+
10V
50k 10F 1F
-
+ VDD DUT VGS QG(TOT) 10V QGS QGD
VGS
Ig(REF Charge, (nC) Figure 27. Gate Charge Test Circuit Figure 28. Gate Charge Waveform tON VDS VGS RGEN VGSPulse Width 1s RL + DUT VDD
0V 10% 90% 50% 10% 50% 10%
td(ON) VDS
90%
tr
tOFF td(OFF tf )
90%
VGS
0V
Duty Cycle 0.1%
Pulse Width
Figure 29. Switching Time Test Circuit
Figure 30. Switching Time Waveforms
FDS6986AS Rev A (X)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM FAST ActiveArrayTM FASTrTM BottomlessTM FPSTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM EnSignaTM i-LoTM FACTTM ImpliedDisconnectTM FACT Quiet SeriesTM
IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM Across the board. Around the world.TM OPTOLOGIC OPTOPLANARTM The Power Franchise PACMANTM Programmable Active DroopTM
POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER SMART STARTTM
SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET UniFETTM VCXTM
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I15

▲Up To Search▲

Price & Availability of FDS6986AS

	To Download FDS6986AS Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .